10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet flownpc 0 600v/75a & 99m ps* ps*: parallel switch for high speed and efficiency neutral point clamped inverter reactive power and lvrt capability sic buck diode low inductance layout solar ups 10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y tj=25c, unless otherwise specified parameter symbol value unit buck igbt t h =80c 57 v ce 600 features target applications schematic flow0 12mm flow0 press-fit types maximum ratings condition collector-emitter break down voltage v t h =80c 57 t c =80c 76 t h =80 c 112 t c = 8 0c 169 t sc t j 12 5c 9 s v cc v g e =15v 360 v buck diode t h =80c 19 t c =80 c 25 t h =80 c 37 t c =80 c 56 t j =t j ma x t j =25c t j =t j max t j =t j max t p limited by t j max 150 ma ximum junction temperature c a 20 w i cpulse i c 175 t j =t j max t p limited by t j max i f v 600 a i fr m t j max repe titive peak forward current peak repetitive reverse voltage gate-emitter peak voltage maximum junction temperature power dissipation per igbt repetitive peak collector current dc collector current t j max p tot short circuit ratings w powe r dissipation per diode p tot dc forward current a v c t c =10 0c 99 a v rrm 2 25 v ge copyright vincotech 1 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition buck mosfet t h =80c 15 t c =80 c 19 t h =80 c 62 t c =8 0 c 93 boost igbt t h =80c 50 t c =80 c 50 t h =80 c 85 t c =80 c 129 t sc t j 15 0c 6 s v cc v g e =15v 360 v v a v w a re petitive peak collector current gate-emitter peak voltage short circuit ratings i cpuls t j =t j max p tot collector-emitter break down voltage t p limited by t j max dc co llector current power dissipation per igbt t p limited by t j max w 600 t j = t j m ax a t j =t j max a v ds v c v 15 0 20 v ge t j =t j max i c v ce dc drain current i d maximum junction temperature powe r dissipation t j max pulse d drain current i dpulse p tot gate-source peak voltage vgs dr ain to source breakdown voltage tc=25c 112 600 225 20 boost inverse diode t h =80c 16 t c =80 c 20 t h =80 c 32 t c =80 c 49 boost diode t j =25c t h =80c 20 t c =80 c 28 t h =80 c 34 t c =80 c 52 600 m aximum junction temperature t j max 175 t c =2 5c v rrm dc forward current p tot c max i mum junction temperature t j max powe r dissipation per diode t j =t j max a t j =t j max w a w v c v a t j =t j m a x dc f orward current i f v rrm i f peak repetitive reverse voltage c max imum junction temperature t j max 150 70 p ower dissipation per diode p tot t j =t j max repe titive peak forward current i frm t p limited by t j max 1200 p eak repetitive reverse voltage 175 copyright vincotech 2 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc vo ltage 4000 v min 12,7 mm min 12,7 mm -40+(tjmax - 25) c storage temperature t stg -40+125 c cl e arance insulation voltage creepage distance t op operation temperature under switching condition copyright vincotech 3 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet para meter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 3,5 4,5 6 tj=150c tj=25c 1,9 2,5 tj=150c 2,1 tj=25c 0,25 tj=150c tj=25c 400 tj=150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0,85 k/ w * see dynamic characteristic at buck mosfet ** additional value stands for built-in capacitor tj=25c 1,50 1,7 tj=125c 1,82 tj=25c tj=125c tbd tj=25c tj=125c tbd tj=25c tj=125c tbd di(rec)max tj=25c /dt tj=125c tbd tj=25c tj=125c tbd 75 600 0 0,00025 75 24 75 tj=25c 15 dif/dt=tbd a/us 300 15 0 v ce =v ge 0 15 f=1mhz v ge(th) c oss v ce(sat) i ces i ges q gate c ies input capacitance reverse recovery time peak rate of fall of recovery current gate-emitter leakage current integrated gate resistor characteristic values value con d itions pf nf ma ns v t j =25c a/s none 94 mws v na buc k igbt * collector-emitter cut-off current incl. diode gate emitter threshold voltage collector-emitter saturation voltage output capacitance 4000 400 30 400 115 r gint c rss v f 20 reverse recovered energy i rrm q rr t rr reverse recovered charge peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge buck diode erec a c nc v thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,91 k/ w tj=25c 90 tj=125c tj=25c 2,4 3 3,5 tj=125c tj=25c 100 tj=125c tj=25c 5000 tj=125c tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. ** see schematic of the gate-complex at characteristic figures tj=25c 0,00 1 2 20 10 10 0 300 15 25 f=1mhz v ds =v gs rgon=x thermal grease thick n ess 50um = 1 w/mk rgoff =x v (gs)th i gss t r c oss e on q gd q g q gs input capacitance gate to drain charge gate threshold voltage e off c iss gate to source charge turn off delay time rise time r thjh zero gate voltage drain current gate to source leakage current turn on delay time v nc na ns mws 2660 61 18 0 480 600 75 18 tj=25c 0 static drain to source on resistance buck mosfet r ds(on) turn-on energy loss per pulse fall time total gate charge t d(off) t d(on) turn-off energy loss per pulse i dss t f thermal resistance chip to heatsink per chip output capacitance 1,29 14 154 119 pf m k/w ua copyright vincotech 4 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet para meter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value cond itions tj=25c 5 5,8 6,5 tj=150c tj=25c 1 1,28 1,9 tj=150c 1,31 tj=25c 0,0038 tj=150c tj=25c 600 tj=150c tj=25c tbd. tj=150c tbd. tj=25c tbd. tj=150c tbd. tj=25c tbd. tj=150c tbd. tj=25c tbd. tj=150c tbd. tj=25c tbd. tj=150c tbd. tj=25c tbd. tj=150c tbd. thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,11 k/ w tj=25c 1,25 1,68 1,95 tj=125c 1,63 v ma tj=2 5 c 45 0,0012 turn-off energy loss per pulse q gate e off turn-on energy loss per pulse e on gate charge input capacitance output capacitance c ies reverse transfer capacitance v ge(th) gate emitter threshold voltage collector-emitter saturation voltage boost igbt t r i ces collector-emitter cut-off incl diode fall time turn-off delay time t d(on) rise time integrated gate resistor gate-emitter leakage current turn-on delay time r gint v ce(sat) c rss c oss t f i ges t d(off) boost inverse diode 20 75 pf ns m w s tj=25c nc 470 na v none 288 v rgon=x f=1mhz rgof f =x diode forward voltage v f 0 0 15 20 v ce =v ge 15 600 300 0 25 137 4620 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,94 k / w tj=25c 1,5 2,44 3,5 tj=125c 2,01 tj=25c 100 tj=125c tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. tj=25c tbd. tj=125c tbd. di(rec)max tj=25c tbd. /dt tj=125c tbd. tj=25c tbd. tj=125c tbd. thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,04 k/ w a ns mws c a /s a v 5 -5 peak reverse recovery current reverse recovered charge boost diode mw/k % tj=25 c tc=100c p rated resistance 350 30 mw 210 power dissipation constant ? r/r r100=1486 deviation of r100 power dissipation i rrm t rr peak rate of fall of recovery current diode forward voltage reverse leakage current v f i r rgon=x reverse recovery energy rever se recovery time thermistor q rr e rec 40 1200 3,5 r tj=25c k b-value b (25/50) tol. 3% k tc=100c 22 a tj=25c tj=25c tj=25c b-value b (25/100) tol. 3% vincotech ptc reference 4000 k copyright vincotech 5 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06NRA084FP02-P969F68 p969f68 p969f68 without thermal paste 12mm press-fit housing 10-pz06nra084fp02-p969f69y p969f68y p969f68y p969-f68 outline orde ring code & marking ordering code and marking - outline - pinout p969-f68y pinout copyright vincotech 6 revision: 1
10-FZ06NRA084FP02-P969F68 10-pz06nra084fp02-p969f68y target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. copyright vincotech 7 revision: 1
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